Topological insulator thin films of Bi2Te3 with controlled electronic structure.

Figure 1 . −K band structure evolution with T Si : a) 560 K (DP = 0.34 eV), b) 580 K (DP = 0.27 eV), c) 600 K (DP = 0.23 eV), d) 625 K (DP = 0.14 eV), and e) 630 K (DP = 0.12 eV). Upper panels show the ARPES intensity maps and lower panels show the corresponding MDC, measured at an interval of 10 meV. Red, purple, and green curves mark E F , VBM, and conduction band minimum (CBM), respectively. Bismuth-based binary compounds such as Bi 2 Te 3 and Bi 2 Se 3 have been known for a long time to be excellent thermoelectric materials due to their unique near-gap electronic structure. [ 1–6 ] Recently, it was shown that these materials host novel topological surface states inside the bulk energy gaps that are protected by the time reversal symmetry. The topological surface states exhibit a variety of exotic electromagnetic phenomena such as Majorana fermions [ 7 ]